1. When pn junction diodes are subjected to increasing reverse bias voltage, they will breakdown due to what is known as
Posted: Tue Apr 26, 2022 2:03 pm
Please assist to answer part 1 and 2 with explanation.
1. When pn junction diodes are subjected to increasing reverse bias voltage, they will breakdown due to what is known as 'Avalanche breakdown'. Considering two diodes that are made of Si and GaAs, which one will breakdown first? Briefly explain your answer. 2. An intimate metal contact is made to an n-type Ge semiconductor at 300 K. Assume that the work function of the metal is 3.8 eV. Determine whether the contact formed is a Schottky contact or an ohmic contact. Justify your answer.
1. When pn junction diodes are subjected to increasing reverse bias voltage, they will breakdown due to what is known as 'Avalanche breakdown'. Considering two diodes that are made of Si and GaAs, which one will breakdown first? Briefly explain your answer. 2. An intimate metal contact is made to an n-type Ge semiconductor at 300 K. Assume that the work function of the metal is 3.8 eV. Determine whether the contact formed is a Schottky contact or an ohmic contact. Justify your answer.