A silicon pn junction diode is designed such that the depletion width in the n-side is 4 times that in the p-side at 300
Posted: Tue Apr 26, 2022 2:01 pm
- A Silicon Pn Junction Diode Is Designed Such That The Depletion Width In The N Side Is 4 Times That In The P Side At 300 1 (26.03 KiB) Viewed 44 times
clearly with step by step working.
A silicon pn junction diode is designed such that the depletion width in the n-side is 4 times that in the p-side at 300 K. The built-in voltage is 0.659 V. (1) Determine the doping concentration at the p- and n-regions of the diode. (ii) Calculate the extent of the depletion Xp and xn in the p- and n-regions, respectively. (iii) When the diode is operated in the forward biased mode, the magnitude of the maximum electric field obtained is 9.9 kV/cm. Calculate the applied biasing voltage.