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Consider a silicon p-n junction diode, with a cross-sectional area of 104 square microns. Its step junction is character
Posted: Tue Jul 12, 2022 8:29 am
by answerhappygod
- Consider A Silicon P N Junction Diode With A Cross Sectional Area Of 104 Square Microns Its Step Junction Is Character 1 (96.32 KiB) Viewed 34 times
Consider a silicon p-n junction diode, with a cross-sectional area of 104 square microns. Its step junction is characterized by donor and acceptor doping levels of 10¹8 cm³ and 10¹7 cm³, respectively. Neither side of the junction is compensated. The relative permittivity of silicon is 11.8. (a) 8 pts. In the depletion approximation, and under equilibrium conditions, how much total charge is stored within the n-side of the depletion region? (b) 8 pts. Under 2 Volts of reverse bias, how deeply does the depletion region extend into the p- type material? (c) 9 pts. Sketch the band diagram for the device under 2V reverse bias in the space below.