Answer Happy

6. Which of the following is true of an abrupt junction such as the one formed in epitaxially grown semiconductor materials? O A. Carrier concentration is uniform on each side of the junction. ⒸB. Carrier concentration is heaviest on one side near the junction and lightest on the other side near the junction. O C. Carrier concentration is heaviest on each side near the junction. O D. Carrier concentration is directly proportional to the distance from the junction. 8. In a CMOS device, you wouldn't usually expect the voltage level for logic O to be greater than ⒸA. 1.5 V. OB. 0.05 V. OC. 0.2 V OD. 2.0 V. 10. When you encounter instability in an le oscillator, what is the usual cause? OA. Feedback at the wrong frequency B. High slew rate OC. Open power supply lead OD. Too much gain 11. What type of transistor is fonned in an IC substrate by vertical duffusion, especially where complementary circuits are being fabricated? O A. JFET OB. NPN C. VMOS O D. PNP