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(6%) Problem 9: An engineer is designing a process for a new transistor. She uses a vacuum chamber to bombard a thin lay

Posted: Sat Jul 09, 2022 12:00 pm
by answerhappygod
6 Problem 9 An Engineer Is Designing A Process For A New Transistor She Uses A Vacuum Chamber To Bombard A Thin Lay 1
6 Problem 9 An Engineer Is Designing A Process For A New Transistor She Uses A Vacuum Chamber To Bombard A Thin Lay 1 (54.16 KiB) Viewed 36 times
Need help with a, b, c
(6%) Problem 9: An engineer is designing a process for a new transistor. She uses a vacuum chamber to bombard a thin layer of silicon with ions of phosphorus, each of mass mp = 5.18 × 10-26 kg. The phosphorus ions are doubly ionized, with each phosphorus ion lacking two electrons. The ions start at rest at one end of the vacuum chamber and are accelerated by an electric field over a distance of re = 39 cm before they strike the silicon layer with velocity vp = 185 m/s. Randomized Variables r₂ = 39 cm vp = 185 m/s ▷ 33% Part (a) Enter an expression for the potential difference AV, in volts, between the initial and final points across the vacuum chamber. Grade Summary Deductions Potential AV= В d h m P Submit Y e j mp S Hint 0 g k n Vp 9 7 8 T^^ 4 5 6 12 3 0 / + END VO BACKSPACE DEL CLEAR - HOME . Feedback I give up! Feedback: 1% deduction per feedback. Hints: 1% deduction per hint. Hints remaining: 3 A33% Part (b) Calculate the average electric field strength E, in volts per meters, across the vacuum chamber. A 33% Part (c) Calculate the average electric force F, in newtons, that the electric field exerts on each phosphorus ions. Submissions Attempts remaining: 3 (1% per attempt) detailed view 1 2 4% 96% 3 4 1% 1% 1% 1%