ASSIGNMENT No. 7 Q1. a. Distinguish between electrons that obey the Fermi-Dirac and Boltzman-Maxwell statistics. (Proper

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Assignment No 7 Q1 A Distinguish Between Electrons That Obey The Fermi Dirac And Boltzman Maxwell Statistics Proper 1 (43.73 KiB) Viewed 28 times

ASSIGNMENT No. 7 Q1. a. Distinguish between electrons that obey the Fermi-Dirac and Boltzman-Maxwell statistics. (Properties and governing equations) Q3. b. Derive an expression for the probability of a hole being created in terms of the Fermi energy level, the highest energy level and density of energy levels in the relevant band. Q2. Given that intrinsic silicon has an energy gap of 1.12eV at room temperature, determine the probability of an electron occupying an excited state at the bottom of the conduction band a. In both intrinsic and extrinsic semiconductors, explain the significance of the equation np = ni² = NcN₁ exp(- E kT where all symbols have their usual meanings b. Given that for a pure silicon Nc = N₁ = 1025 levels per cubic, find the density of charge carrier-pairs per at room temperature