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● Chrome File Edit View History ← → C Exam-sharnd - OneDrive Share YCC 2021 STEMS Fall 2020 Copy link Bookmarks Profiles Tab X C Home | answers.com ABDO 6 Window Spring 2021 Summer 2021 X Help + ☐utsacloud-my.sharepoint.com/personal/youngjoong_joo_utsa_edu/_layouts/15/onedrive.aspx?id=%2Fpersonal%2Fyoungjoong_joo_utsa_edu%2FDo... Q Û Eniola Music Crack Apps Coding Fall 2021 SPRING 2022 N - @ #tv [E3323 Su22 exam #2.pdf 1. (20) True or False 1) Quasi-Fermi level is applied for non-equilibrium condition. 2) For the indirect band gap semiconductor, the band gap energy is dissipated as phonons. 3) The continuity equation can be simplified to An 0² An = D₁ + G for the majority carrier. a 2x² An T₁ 4) If the energy difference between E₁ and Er is 0.56eV, then the potential difference is 0.56V. 5) Density of states are same for Si and GaAs at the same energy level. 6) The electron/hole velocity is saturated at low electric fields. 7) The intrinsic Fermi level lies precisely at midgap when T=OK. 8) Fermi function is not a function of temperature. 9) Minority carrier diffusion equation can be used when the electric field is constant. 10) Ionized impurity scattering becomes dominant as the temperature is decreased. SUMMER 2022 UTSA P5 C Ⓒ Ⓒon Q Ai 22 $ o ☎ 98 O Live 0 2. (20) An infinity uniformly doped n-type silicon bar is maintained at room temperature under steady state conditions such that Ap (0)= 10¹%/cm³. N₂= 10¹5/cm³, Apno <<no. Assume μp = 2000 cm² /Vs, Tp = 1μs Amazon T G Wed Jul 6 4:01 PM @D STUDIO RENTAL 3 B 1/1 (True or False) (True or False) (True or False) (True or False) (True or False) (True or False) (True or False) (True or False) (True or False) (True or False) · Aa