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2. An abrupt Si PN junction at 300 K is characterized by ND = 10¹6 cm³ and NA = 2.5 x 10¹5 cm³. Calculate the built in potential, maximum electric field and depletion region width. Repeat the calculation with an applied reverse bias voltage of 1 V. (20 marks) 3. The region of a silicon device that is at room temperature (T = 300 K) is doped with 10¹5 cm³ acceptor atoms. A stream of minority carriers is injected at x = 0 and the -3 distribution of minority carriers in the sample is assumed to be linear, decreasing from a value of 10¹1 cm ³ at x = 0 to the equilibrium value at x = W, where W is 10 microns. (20 marks) a. Sketch the region. b. Determine the diffusion current density of electrons.