- 3 The Region Of A Silicon Device That Is At Room Temperature T 300 K Is Doped With 10 5 Cm Acceptor Atoms A Strea 1 (22.13 KiB) Viewed 20 times
3. The region of a silicon device that is at room temperature (T= 300 K) is doped with 10¹5 cm-³ acceptor atoms. A strea
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3. The region of a silicon device that is at room temperature (T= 300 K) is doped with 10¹5 cm-³ acceptor atoms. A strea
3. The region of a silicon device that is at room temperature (T= 300 K) is doped with 10¹5 cm-³ acceptor atoms. A stream of minority carriers is injected at x = 0 and the distribution of minority carriers in the sample is assumed to be linear, decreasing from a value of 10¹¹ cm³ at x = 0 to the equilibrium value at x = W, where W is 10 microns. (20 marks) a. Sketch the region. b. Determine the diffusion current density of electrons.