2. An abrupt Si PN junction at 300 K is characterized by No = 10¹6 cm ³ and NA= 2.5 x 10¹5 cm³. Calculate the built in p
Posted: Thu Jul 07, 2022 12:03 pm
2. An abrupt Si PN junction at 300 K is characterized by No = 10¹6 cm ³ and NA= 2.5 x 10¹5 cm³. Calculate the built in potential, maximum electric field and depletion region width. Repeat the calculation with an applied reverse bias voltage of 1 V. (20 marks)