Answer Happy

Consider the diagram below, which shows an initial concentration profile C(x,t=0) of some atomic species in a host material. This could be the concentration profile of phosphorous that was ion-implanted into silicon at two different energies (causing the two local maxima in the profile). If this were the case, the concentration of phosphorous would be much less than 1% of the silicon host atoms. At which of the four points will the concentration increase as a result of the flux? 4 с Concentration B C(x,t=0) D 0 0 Depth in material Check all that apply. View Available Hint(s) Opoint A point B O point o point D