(1) A sample of GaAs is doped with 10¹5 cm³ acceptor atoms. Light is shone on the sample such that the number of photons
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(1) A sample of GaAs is doped with 10¹5 cm³ acceptor atoms. Light is shone on the sample such that the number of photons absorbed per unit volume per unit time is 1022 EHP cm³ s¹. Assume that T = 107 s, n = 2.1 x 106 cm³, and energy band gap of 1.43 eV at 300 K. Determine An and Ap. Explain if this is a low-level injection. Draw the energy band diagram of the semiconductor in the presence of light. (i) (ii) (iii) 2) A sample of Si is doped with 3 x 10¹5 cm³ donor atoms and 10¹5 cm³ acceptor atoms at 300 K. (i) (ii) Determine the Fermi level (in eV) of the doped semiconductor and draw the energy band diagram. At T = 550 K, the intrinsic carrier concentration of Si is 1.1 × 10¹5 cm²³. Calculate the carrier densities of the doped semiconductor at this temperature.