(a) A sample of Si at 300 K is known to be n-type. It has length 1 cm, cross- sectional area 0.5 mm², resistance 500 and
Posted: Sun Jul 03, 2022 12:14 pm
- A A Sample Of Si At 300 K Is Known To Be N Type It Has Length 1 Cm Cross Sectional Area 0 5 Mm Resistance 500 And 1 (72.94 KiB) Viewed 21 times
(a) A sample of Si at 300 K is known to be n-type. It has length 1 cm, cross- sectional area 0.5 mm², resistance 500 and carrier mobilities μn = 1350 cm²V-¹S-¹ and concentration. Up = 350 cm² V-¹s-¹. Determine the majority carrier (b) (i) (ii) If the Fermi energy level of a semiconductor is positioned at Ey + kT, deduce the probability of finding electrons in the states at Ec+kT. The band gap energy of the semiconductor at 300 K is 1.1 eV. Develop an expression for the total number of available states per unit volume in the valence band between energies Ev and Ev - KT. Assume the density of states for the valence band of the semiconductor is Ny(E)= a√√Ev - E where a is a constant.