Answer Happy

Preliminary Calculations:1. One of the conditions for forward active (saturation) regionoperation is VDS > (VGS-Vth). Show that this condition isequivalent to VGD < Vth.2. For the circuit of Figure 1, if RD = 4.7kΩ, VDD = 5V, λ = 0.Calculate ID and state whether the device is in the cutoff,saturation (forward active) or linear (triode) regionof operation if VGS =1V, 2V, and 4V.3. Suppose that an n-channel MOSFET (not a CD4007 type) is measuredto have ID = 35μ when VGS =1.46V and ID = 430 μ when VGS =2.18V. Find Vth for this MOSFET.
1. One of the conditions for forward active (saturation) region operation is VDs > (VGS-Vth). Show that this condition is equivalent to VGD < Vth. 2. For the circuit of Figure 1, if RD = 4.7k9, VDD = 5V, λ = 0. Calculate Ip and state whether the device is in the cutoff, saturation (forward active) or linear (triode) region of operation if VGS =1V, 2V, and 4V. 3. Suppose that an n-channel MOSFET (not a CD4007 type) is measured to have ID = 35μ when VGS =1.46V and ID = 430 μ when VGs = 2.18V. Find Vth for this MOSFET. + RD VDS M1 V DD