(a) (b) (c) The semiconductor of a diode can have a major impact on the reverse biased saturation current. Compare and e
Posted: Sun Jul 03, 2022 12:10 pm
- A B C The Semiconductor Of A Diode Can Have A Major Impact On The Reverse Biased Saturation Current Compare And E 1 (66.78 KiB) Viewed 20 times
(a) (b) (c) The semiconductor of a diode can have a major impact on the reverse biased saturation current. Compare and explain this impact between a Si and Ge diode given their intrinsic carrier concentrations are 1.5 × 10¹0 cm-³ and 2.0 x 1013 cm³ at 300 K, respectively. A Si device is doped so that N = 10¹6 cm²³, n = 107 s,,tp = 3 × 106s and gopt 1022 EHP cm³³s¹. Determine the steady state excess carrier concentrations. A Si p¹np BJT is doped with NAE = 5 × 10¹6 cm²³, NDB = 10¹5 cm³, and NAC = 3 x 10¹³ cm³ at T = 300 K and maintained under equilibrium conditions. Draw the energy band diagram for the device, properly positioning the Fermi level in the three device regions.