Р i d₁ n The purpose of this exercise is to conduct a general discussion of the diode characteristics, similar to the di
Posted: Sat Jul 02, 2022 10:16 pm
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Р i d₁ n The purpose of this exercise is to conduct a general discussion of the diode characteristics, similar to the discussion conducted in the class for a p-n junction. For the discussion, you may assume the following: 1) The semiconductors are not degenerated 2) There are no impurities in the intrinsic layer and you may ignore recombination in this region 3) The entire semiconductor structure is made of silicon (Si) at room temperature, so you may find any numerical value of the parameters you might need in the literature (for example, the mobility!) The discussion is expected to be general (and, as analytical as possible). However, please add numerical calculations for the following set of parameters: Intrinsic region width, d, 1 μm, N₁ N₁ ≈10¹ cm³ A
Q1: thermodynamic equilibrium Under the common approximations (concerning the free carrier's concentrations) solve the equations of the junction at thermal equilibrium and derive analytical (or semi- analytical) solution for the parameters describing the junction (particularly the energy band structure, the electrostatic potential, the width of the corresponding layers/regions and the free carrier's concentrations in the various regions of the junction); you may add plots and graphs whenever is needed. In particular, look at the following limits: d, →0, and the limit of "large" d, (try to explain - large with respect to what?). Discuss the characteristics of the diode in these limits