Answer Happy

Let a semiconductor of p-type uniformly illuminated by light of generation G₁. a) Regarding uniform spatial optic generation and take steady state condition, calculate minority excess electron concentration in terms of G₁ and recombination lifetime. b) If E₁ - EF c) plot band diagram for low injection and then for high injection cases. If light illuminated not uniformly rather illuminated to Si sample's left face as shown in figure, and the sample has no trapping (i. e., R = : 0), calculate Sn(x) if right end of sample is contacted with metal and steady state. Sample's length is 1. = EG 11' Ligat m 0 x=l