Answer Happy

Using the values given in Table 3.1 on page 190 in your textbook for GaAs, and the Varshni bandgap equation (3.11.2) from your textbook with GaAs constants of Ego = 1.519 (eV), A = 5.41×10-4 (eV/K), and B = 204 (K) calculate the intrinsic carrier concentration at (1.800x10^2) °C. Give your answer in (cm³) to 4 significant digits.
TABLE 3.1 Selected typical properties of various semiconductors at 300 K a (nm) Eg (eV) X(eV) N₂(cm³) N₁ (cm3) 1.04 × 10¹⁹ 6.0 × 10¹⁹ 2.8 X 10¹⁹ 1.2 × 10¹⁹ 5.2 × 10¹7 1.1 × 10¹⁹ 4.7 x 10¹7 7.0 × 10¹8 1.5 × 10¹⁹ 1.7 × 10¹⁹ Ge (DI) Si (DI) InP (ZB) 0.5650 0.66 (I) 0.5431 1.11 (I) 0.5868 1.35 (D) GaAs (ZB) 0.5653 1.42 (D) AlAs (ZB) 0.5661 2.17 (I) 4.13 4.05 4.50 4.07 3.50 n(cm3) &, 2.3 × 10¹3 16.0 1.0 × 10¹0 11.8 3.0 × 107 12.6 2.1 X 106 13.0 10 10.1 Me Mh (cm² V-¹s¯¹) (cm² V−¹s¯¹) 3900 1450 4600 8500 200 1900 490 150 400 100 Notes: Data combined from a number of sources. I and D represent indirect and direct bandgap. DI, diamond crystal; ZB, zinc blend; a, lattice constant. (Note that there are variations in the values of certain properties among books, for example, n¡ for Si, &, for GaAs, etc. Most commonly used or recent values have been selected.)