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Special Problem (35 pts) A complementary pair of ideal n-channel and p-channel MOSFETs are to be designed so that the de
Posted: Wed Mar 30, 2022 9:50 am
by answerhappygod
- Special Problem 35 Pts A Complementary Pair Of Ideal N Channel And P Channel Mosfets Are To Be Designed So That The De 1 (42.48 KiB) Viewed 43 times
- Special Problem 35 Pts A Complementary Pair Of Ideal N Channel And P Channel Mosfets Are To Be Designed So That The De 2 (4.71 KiB) Viewed 43 times
Special Problem (35 pts) A complementary pair of ideal n-channel and p-channel MOSFETs are to be designed so that the devices exhibit the same gm and fi when equivalently biased and operated for an analog amplifier application. The structural parameters of the n-channel device are W = 50 um, L = 5 um, tox = 0.05 um, and Na = 1015/cm². The p-channel device has the same oxide thickness and substrate doping, but, because of the lower hole mobility, must have different gate dimensions. However, due to a design error, the p-channel MOSFET had the same L as the n-channel MOSFET. Assuming the effective mobility at the surface is half the bulk mobility (Table B4) for both devices. (a) (20 pts) Calculate the fi for the p-channel MOSFET if the n-channel device has a f1 of 800 MHz. (b) (15 pts) Calculate the W of the p-channel MOSFET if the two devices have the same gm.
Mobility (cm/V-s) Electron, Hole, up 1350 480