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23. Use this information to answer Questions 23-25: Consider a npn bipolar junction transistor (made of silicon) in which the base region is doped uniformly with NA = 1 x 1017 -3 and the collector region is doped with Np = 1 x 1016 cm 3. The total base width (which includes both the depletion region width and the quasi-neutral base width) is xb = 3 um = em Obtain the quasi-neutral base width by calculating the depletion region width xp within the base region at the base- collector junction and then subtracting it from the total base width. Here, we are ignoring the depletion region width in the base region at the base-emitter junction because it does not have any influence on the Early effect. Give your answer in unit of nm. Answers within 5% error will be considered correct. Enter answer here