Solve the following problem using MathCAD
Posted: Sat Feb 26, 2022 11:46 am
Solve the following problem using MathCAD
= 2- If the semiconductor of problem-1 is doped with additional acceptor Na= 1x1017 1/cm3, Find the electron and hole concentrations at 300 K if the material for (i) Silicon, (ii) GaAs, and (iii) Germanium. You may need to use Fig. 3-17 shown below. a.
T(K) 500 400 300 250 10.16 Figure 3-17 Intrinsic carrier concentration for Ge, Si, and GaAs as a function of in- verse temperature. The room temper- ature values are marked for reference. Ge 1014 2.5 x 1013 cm -3 Si 1012 ni(cm) 1.5 X 101 10 10 GaAs 108 2 X 106 106 2 4 4 3 1000 / T (K) -1
1- A silicon material is doped with donor doing of 2x1017 cm-3. a. Find the electron and hole concentrations at 300 K if the material is (i) Silicon, (ii) GaAs, and (iii) Germanium. You may need to use Fig. 3-17 shown below.
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T(K) 500 400 300 250 10.16 Figure 3-17 Intrinsic carrier concentration for Ge, Si, and GaAs as a function of in- verse temperature. The room temper- ature values are marked for reference. Ge 1014 2.5 x 1013 cm -3 Si 1012 ni(cm) 1.5 X 101 10 10 GaAs 108 2 X 106 106 2 4 4 3 1000 / T (K) -1
1- A silicon material is doped with donor doing of 2x1017 cm-3. a. Find the electron and hole concentrations at 300 K if the material is (i) Silicon, (ii) GaAs, and (iii) Germanium. You may need to use Fig. 3-17 shown below.