- An Ideal Silicon Abrupt Junction Diode Has Nd 10 6 Cm And N 10 7 Cm At 300k E 11 7 N 1x10 0 Cm Tn Tp 1ms 1 (20.28 KiB) Viewed 168 times
An ideal silicon abrupt-junction diode has ND 10¹6 cm³ and N₁- 10¹7 cm³ at 300K. e = 11.7, n₁ = 1x10¹0 cm³, tn= tp = 1ms
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An ideal silicon abrupt-junction diode has ND 10¹6 cm³ and N₁- 10¹7 cm³ at 300K. e = 11.7, n₁ = 1x10¹0 cm³, tn= tp = 1ms
An ideal silicon abrupt-junction diode has ND 10¹6 cm³ and N₁- 10¹7 cm³ at 300K. e = 11.7, n₁ = 1x10¹0 cm³, tn= tp = 1ms, mn= 1400 cm²/Vs, mp= 250 cm²/Vs a. Sketch the space-charge distribution and electric-field distribution for this diode. Find the following and clearly label your answers: b. Built-in potential c. n-side depletion width x, and p-side depletion width xp d. Depletion capacitance at zero bias, forward bias V = +0.3V and reverse bias V = -5V e. Maximum electric field