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a) An MOS capacitor has a p-type silicon semiconductor substrate doped with an impurity concentration of 10¹8 cm³. Assume a poly-Si material is used for the gate. Draw a diagram of the capacitor structure showing material types and an energy band diagram when it is in thermal equilibrium. (10 marks) b) Given an MOS capacitor with a p-type silicon semiconductor substrate and poly- Si material as gate (in part a), what is the meaning of flat band condition? (5 marks) c) Given the MOS capacitor with a p-type silicon semiconductor substrate of an impurity concentration 10¹8 cm²³ and poly-Si material as gate (in part a), calculate the flat band voltage VFB.