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9. A silicon P-N structure is shown in Figure 3.1. The length of p-type is equivalent to the length of n-type. The diode
Posted: Tue Jun 07, 2022 11:56 am
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- 9 A Silicon P N Structure Is Shown In Figure 3 1 The Length Of P Type Is Equivalent To The Length Of N Type The Diode 1 (43.45 KiB) Viewed 53 times
9. A silicon P-N structure is shown in Figure 3.1. The length of p-type is equivalent to the length of n-type. The diode has NA = Np = 1024 m³ and the minority carrier lifetime is 100 us and 150 us in p-type and n-type, respectively. The resistivity of the p-type material is 4.6x10³ 2m and the resistivity of the n-type material is 1.3x10 m at room temperature. Resistance of the intrinsic Silicon material is 5.5 M2. Electron mobility in n-type and hole mobility in p-type is 1/3 of the electron and hole mobility in the intrinsic material, respectively. Calculate the saturated current at room temperature. P N s = 0.1 mm² V₁ = 0.026 V e=1.6x10-¹⁹ C 1.4 cm Figure 3.1: Silicon-based P-N junction