Low excess avalanche noise factor is produced when A. Only one of the carriers can initiate impact ionisation events. B.
Posted: Tue Jun 07, 2022 11:14 am
Low excess avalanche noise factor is produced when
A. Only one of the carriers can initiate impact ionisation
events.
B. A semiconductor with a large bandgap is used.
C. Both electrons and holes can initiate impact ionisation with
equal probability. 错！
D. The breakdown voltage is low.
E. The intrinsic carrier concentration is high.
A. Only one of the carriers can initiate impact ionisation
events.
B. A semiconductor with a large bandgap is used.
C. Both electrons and holes can initiate impact ionisation with
equal probability. 错！
D. The breakdown voltage is low.
E. The intrinsic carrier concentration is high.