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1. In Fig. 3. If VBE(SAT) 0.75 V, VBE(FA) = 0.65 V, VD(ON) 0.65 V, VCE(SAT) - 0.1 V. When VIN is high, the current pass-through RD is A 0.13 mA 5-0.1 B. 0.15 mA CO 11k D. 0.02 mA 2. In Fig. 3. If Vcc=5 V. VBE(SAT) = 0.75 V, VBE(FA) = 0.65 V, VD(ON) = 0.65 V, VCE(SAT) = 0.1 V. When VIN is low, the value of the current Icc is OA 243 mA 8 C 2.125 mA D. 1.33 mA 3. In Fig. 3. When VIN is low, the value of the current IRC is PR, 1.75 k A 1.33 mA B. 0.817 mA (1-P)R, 20 ⒸOA Q D. 2.125 mA 4. In Fig. 3. When VIN is high, the value of the current IRC is A. 1.33 mA B. 0.817 mA C. OA D. 2.125 mA 1 2 4 6 3 V₂0-K4 D, -D Ris 5 +0.65 ro G50-75 Fig. 3 7 8 D₂ 9 R₂ 6k 5802 IRC ba 10

5. In Fig. 1. If VBE(SAT) = 0.75 V. VBE(FA)-0.65 V, VD(ON) = 0.65 V, the value of VIL is A 2,05 V 8 1.4 C. 13 V D. 0.65 V 6. In Fig. 1. If VBE(SAT) = 0.75 V. VBE(FA) 0.65 V, VD(ON) = 0.65 V, the value of VIH is 1.4 V B. 1.3 V C. 0.75 V D. 2.05 V 7. The main purpose of the level-shifting diode in DTL gate is A. To improve the low and high noise margins B. To improve the low noise margin C. To improve the high noise margin none of them D. 8. In Fig. 2. The main purpose for RD is A. active current sourcing 8. passive current sourcing C. to provide discharge path for forward stored charge removal from base Qo D. to provide discharge path for saturation stored charge removal from base Qo 9. In Fig. 2. If VBE(SAT) = 0.75 V, VBE(FA) = 0.65 V, VD(ON) = 0.65 V, the value of VIH is A 1.5 V B. 1.3 V C. 1.4 V D. 2.8 V 10. In Fig. 2. When VIN is high, the state of QL is A. Forward active 8. Saturation C. Cutoff D. Reverse active A. PR, 1.75 k (1-0)R, 20 V₂0 K D₂ a -D4D4 Fig. 1 o Fig. 2 www. A R₂ 6k RDS SKO Van