8. Electrons in the active region of a Al, Ga-As/GaAs/Al, Ga₁-As double heterojunction have a concentration of 2 x 1018
Posted: Mon Jun 06, 2022 7:08 pm
8. Electrons in the active region of a Al, Ga-As/GaAs/Al, Ga₁-As double heterojunction have a concentration of 2 x 1018 cm-3. Calculate the current density of the carrier loss over the barrier for barrier heights of 200 meV, assuming that an effective density of states is 4.4 x 10¹7 cm-3 and a minority carrier lifetime is 5 ns.