Consider a pn junction diode at 300 K in which the p doping density is 1024 m-3 while the n doping density is 1022 m-3.
Posted: Wed May 25, 2022 7:35 am
Consider a pn junction diode at 300 K
in which the p doping density is 1024 m-3
while the n doping density is 1022 m-3. The
thickness of the p-doped region is 10 μm while the thickness of the
n-doped region is 20 μm and the cross-sectional area of the diode
is 2 μm2. Take kT=0.025 V, kT/q=0.025
eV, the intrinsic carrier concentration ni to be
1.5x1016 m-3 at 300K, the diffusion constant
for the electrons De to be 0.0038 m2/s
and the diffusion constant for the holes Dh to be
0.0012 m2/s.
(6 marks)
(6 marks)
(5 marks)
in which the p doping density is 1024 m-3
while the n doping density is 1022 m-3. The
thickness of the p-doped region is 10 μm while the thickness of the
n-doped region is 20 μm and the cross-sectional area of the diode
is 2 μm2. Take kT=0.025 V, kT/q=0.025
eV, the intrinsic carrier concentration ni to be
1.5x1016 m-3 at 300K, the diffusion constant
for the electrons De to be 0.0038 m2/s
and the diffusion constant for the holes Dh to be
0.0012 m2/s.
(6 marks)
(6 marks)
(5 marks)