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Posted: **Wed May 25, 2022 7:31 am**

: Q4 Consider A Pn Junction Diode At 300 K In Which The P Doping Density Is 1024 M3 While The N Doping Density Is 1022 M 1 (38.12 KiB) Viewed 22 times

: Q4 Consider A Pn Junction Diode At 300 K In Which The P Doping Density Is 1024 M3 While The N Doping Density Is 1022 M 2 (18.01 KiB) Viewed 22 times

Q4 Consider a pn junction diode at 300 K in which the p doping density is 1024 m3 while the n doping density is 1022 m³. The thickness of the p-doped region is 10 μm while the thickness of the n-doped region is 20 µm and the cross-sectional area of the diode is 2 μm². Take kT-0.025 V, kT/q-0.025 eV, the intrinsic carrier concentration n, to be 1.5x1016 at 300K, the diffusion constant for the electrons De to be 0.0038 m²/s and the diffusion constant for the holes Dh to be 0.0012 m²/s. m-3
bi) Calculate contact potential at equilibrium and the total depletion layer thickness. (2 marks) ii) Calculate the maximum electric field strength and say where it is located. (2 marks)