Answer Happy

A long base silicon p-n junction (length = L >> diffusion length) is uniformly doped with N₁ = 10¹7 cm³ on the p-side and N₁ = 5x10¹ cm³ on the n-side forming an abrupt junction with a cross sectional area of 10-4 cm². The minority carrier lifetimes are tn = Tp = 0.1 μsec.

3. With a forward bias of Va=0.5 V, sketch the diffusion current Ip (x) due to holes in the n-side, i.e., x> X₁. and give its value at x, and xn+3Lm on figure below. (Remember D/µ = KT / q, and L₁p=√√Dnpp). (12 pts) Current Density p-side n-side -Xp Xn 4. Draw the total current on the same figure. What fraction of the total is this current is due to holes at x = Xn? (8 pts) 5. Give values for the majority electron current on the n-side at xn, and xn+3Ln with Va=0.5 V (7 pts) 6. Find the value of electron current only at the edge of the depletion region on the p-side, i.e., at -xp. (8 pts)