Answer Happy

• Comment on what happens to the energy bands, maximum electric field value, built-in potential value, depletion region width of the P+-N junction due to forward and reverse bias example, does the band bending change (i.e. becomes larger or smaller) Comment on the differences between the two l-V curves in the forward and reverse bias regions (i.e. which one is higher or lower). What is the effect of operating temperature on the l-V characteristics of a silicon P+ -N diode? Follow the checklist for task 3 (this time, you explain what happens as the operating temperature increases/decreases). What is the effect of N-side doping concentration on the l-V characteristics of a silicon P+ -N diode? • Start by drawing the three I-V curves together on a linear scale and explain what happens to different parts of the curve as the doping increases/decreases.