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Problem 3 (25 points) A MOS capacitor with polysilicon gate and typesemiconductor doped with 1 - 5x10cm The silicon dioxide gate has a thickness of 400 A The oxide charge density Q10 cm. The flat-band voltage is LOV. ? -10V en is the number of electronic changes per unit area in the oxide F € = 3.957 = 11.76-8.85 10 E = 1.12 cm 0.0267,1 =1.5x10 cm AT 2) (5 points) Calculate the surface potential at threshold inversion point b) (5 points) Calculate the threshold voltage - point is the polysilicon gate n o p type and why? d) (5 points) Sketch the energy band diagram along the MOS capacitor at the onset of inversion = 5 points) Sketch the MOS capacitance versus Va assuming low frequency
Problem 3 (25 points) A MOS capacitor with polysilicon gate and p-type semiconductor doped with No - 5x10 cm. The silicon dioxide gate has a thickness of 400 Á. The oxide charge density Q = 6x100cm. The nat-band voltage is -LO V. is the number of electronic charges per unit arca in the oxide SS. € = 3.9€ ,=11.78, E = 8.85x10 E = 1.12eV kt C/2 0.0261. = 1.5x10 cm 40 a) (5 points) Calculate the surface potential at threshold inversion point. b) (5 points) Calculate the threshold voltage c) (5 points) Is the polysilicon gate n or p type and why? d) (5 points) Sketch the energy band diagram along the MOS capacitor at the onset of inversion e) (5 points) Sketch the MOS capacitance versus Va assuming low frequency.