1. A simplified Si JFET has an n-channel with 1.58 x 104 cm" donors. Assume the following channel geometry: Height - 2 u
Posted: Sat May 21, 2022 12:57 am
1. A simplified Si JFET has an n-channel with 1.58 x 104 cm" donors. Assume the following channel geometry: Height - 2 um, depth -8 um and length - 12 jim. (a) Calculate the pinch-off voltage V. for this transistor. (b) Assume the n-channel electrons to have a mobility of 1100 cm /V.s, calculate the conductivity and resistivity of the channel. () Using the geometry of the channel calculate its resistance and conductance. (d) Plot lo vs. V. (drain current vs. drain voltage) for the following four gate voltages: 0,-1, -2, and -3 volts. Choose the following range for the drain voltage: 0 V - 10 V (©) Calculate the value of saturation current for each gate voltage and identify the corresponding points on the graph. Manually connect these four points to generate a "saturation point" curve for this device.