Find the donor and acceptor doping concentrations to design the silicon p-n diode so that In = 25A/cm2 and Jp = 7A /cm2
Posted: Sat May 21, 2022 12:02 am
Find the donor and acceptor doping concentrations to design the silicon p-n diode so that In = 25A/cm2 and Jp = 7A /cm2 at Vbi = 0.7V. The remaining parameters are given below. n; = 9.65x10 cm- , Do =21cm²/s, De = 10cm?/s, tpo = Tpo = 5x107s. DnDp = = - = ° -3 2 -