3. Find the donor and acceptor doping concentrations to design the silicon p-n diode so that In = 25A/cm2 and Jp = 7A /c
Posted: Fri May 20, 2022 11:54 pm
3. Find the donor and acceptor doping concentrations to design the silicon p-n diode so that In = 25A/cm2 and Jp = 7A /cm2 at Vbi = 0.7V. The remaining parameters are given below. n; = 9.65x109cm, D, =21cm²/s, Dp = 10cm²/s, tpo = Tpo = 5x10's.