An NMOS transistor, operating in the linear-resistance region with vDS = 50 mV, is found to conduct 25 μA for vGS = 1 V
Posted: Fri May 20, 2022 11:22 pm
An NMOS transistor, operating in the linear-resistance region
with vDS = 50 mV, is found to conduct 25 μA for vGS = 1 V and 50 μA
for vGS = 1.5 V. What is the apparent value of threshold voltage
Vt? If kn ′ = 50 μA/V2 , what is the device W/L ratio? What current
would you expect to flow with vGS = 2 V and vDS = 0.1 V? If the
device is operated at vGS = 2 V, at what value of vDS will the
drain end of the MOSFET channel just reach pinch-off, and what is
the corresponding drain current?
with vDS = 50 mV, is found to conduct 25 μA for vGS = 1 V and 50 μA
for vGS = 1.5 V. What is the apparent value of threshold voltage
Vt? If kn ′ = 50 μA/V2 , what is the device W/L ratio? What current
would you expect to flow with vGS = 2 V and vDS = 0.1 V? If the
device is operated at vGS = 2 V, at what value of vDS will the
drain end of the MOSFET channel just reach pinch-off, and what is
the corresponding drain current?