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Consider a silicon pn junction at zero bias with an electric field distribution as sketched below. The relative dielectric constant or permittivity of silicon is 11.7. The metallurgical junction is placed at x = 0. E(x) [V/cm] 105 0 50 100 x [nm] (a) Calculate the built-in potential (numerical answer with appropriate sign and units expected). (7 pts) (b) Estimate the doping type and doping level of the region between 50<x< 100 nm (numerical answer with appropriate sign and units expected). (7 pts)
Consider som jundial role with a decir ſidd distributo askechedlelow. The relative dielectric content or pamiltivity of silicon is 11.7. The metallurgical junction is placed=0 Eixi [Viem 108 0 50 100 () Cakulate the buil-in potential numerical wer with appropriate sign and its expectel). (1) Estimate the doping type and doping level of the region between 50<x< 100 (merical wer with appropriate sign and is expecial). p) Name (e) What can you say about the deping type and doping level of the region between 0<x<50 (1) (1) What can you say about the doping type and deping level of the region between x < 0 mm?( زخم