- A Mos Capacitor Has An N Polysilicon Gate And A P Type Body Doped With Boron At A Concentration Of 3 8 X 10 17 Cm 3 Th 1 (25.4 KiB) Viewed 7 times
A MOS capacitor has an N+ polysilicon gate and a P-type body doped with boron at a concentration of 3.8 x 10^17/cm^3. Th
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A MOS capacitor has an N+ polysilicon gate and a P-type body doped with boron at a concentration of 3.8 x 10^17/cm^3. Th
A MOS capacitor has an N+ polysilicon gate and a P-type body doped with boron at a concentration of 3.8 x 10^17/cm^3. The thickness of the gate oxide is 30 angstroms. If this capacitor is operating in depletion with a depletion region width of 44 nanometers, then what is the voltage across the oxide in millivolts? Use: Es = 11.7, cox = 3.9, 80 = 8.854 x 10^-14 F/cm, and q = 1.6 x 10^-19 C. For this question, be sure to give your answer to the nearest millivolt! -