- Problem 2 35 Points A Si P N Junction Solar Cell Is Fabricated With Na 5 X 1015 Cm And No 2 5 1020 Cm The Mobi 1 (64.09 KiB) Viewed 6 times
Problem 2 (35 points): A Si p-n junction solar cell is fabricated with Na = 5 x 1015 cm and No = 2.5 * 1020 cm. The mobilities of the minority charge-carrier on each side of the junction are un = 1200 cm?/V.s and Mp = 750 cm?/ Vs. It is illuminated with light that generates 1019 BHP/cm-s. Under open-circuit conditions, the profile of the optically-injected minority carrier concentration is shown below. P-side N-side ) است Anp(x) Apn(x) +7 x (um) cm -3 The excess minority carriers in each region are given by, Any(x) = 10%e0.1(x+4) cm-3 Apn(x) = 1013e-0.2(x-7) where the distances are measured in microns. The current density at maximum electrical power extracted from the solar-cell is max = 0.4 mA/cm². Calculate (a) (10 points) the short-circuit current density, (b) (15 points) the open-circuit voltage, (c) (10 points) the fill-factor for this solar cell device assuming ideal diode conditions.