A Silicon PN junction at zero bias has dopant concentrations of 𝑁𝑎 = 5 × 1015 cm-3 at P-side and ⻓
Posted: Fri May 20, 2022 8:17 pm
A Silicon PN junction at zero bias has dopant concentrations of
𝑁𝑎 = 5 × 1015 cm-3 at P-side and 𝑁𝑑 = 1 × 1014 cm-3 at N-side.
Assume 𝑇 = 300𝐾 for all problems.
(a) Calculate the built-in potential 𝑉𝑏𝑖 and depletion region
width 𝑥𝑁, 𝑥𝑃 .
(b) Calculate the applied bias required to make the 𝑥𝑁 = 30
𝜇𝑚
(c) Calculate the depletion region width at p-side 𝑥𝑃 when the
applied bias at (b) is applied.
(d) Calculate the junction capacitance 𝐶 when the applied bias
at (b) is applied.
𝑁𝑎 = 5 × 1015 cm-3 at P-side and 𝑁𝑑 = 1 × 1014 cm-3 at N-side.
Assume 𝑇 = 300𝐾 for all problems.
(a) Calculate the built-in potential 𝑉𝑏𝑖 and depletion region
width 𝑥𝑁, 𝑥𝑃 .
(b) Calculate the applied bias required to make the 𝑥𝑁 = 30
𝜇𝑚
(c) Calculate the depletion region width at p-side 𝑥𝑃 when the
applied bias at (b) is applied.
(d) Calculate the junction capacitance 𝐶 when the applied bias
at (b) is applied.