- 4 The Figure Shows The Cross Section Schematic Of A Kaufman Ion Source It Is Known That V 40v V 800v Grid Spacing Is 1 (33.97 KiB) Viewed 52 times
4. The figure shows the cross-section schematic of a Kaufman ion source. It is known that V-40V, V=800V, grid spacing is
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4. The figure shows the cross-section schematic of a Kaufman ion source. It is known that V-40V, V=800V, grid spacing is
4. The figure shows the cross-section schematic of a Kaufman ion source. It is known that V-40V, V=800V, grid spacing is 1.5mm, and K=1x10-1SF/m. Assume singly ionized argon. (a) Find the maximum ion flux from the source. (b) Determine the etch rate if the source is used to for an ion beam etcher to etch silicon. Electron Temperature (°C) filament 1300 1200 1100 1000 o SiH 03 v SiH, A SHCI 200 800 700 600 LO افففففففففففف Ar SIC 02 Ar gas injection ArChamber towany Growth rate (m/min) 0.1 Ar 10 005 Ar 0.02 Collector plate 0.01 - 0.7 11 V.V. 08 09 10 Temperature. 1000/T (K) Figure P4. Figure P5.
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