Answer Happy

For the given problem below, use the variables given in Table 1. a. Write a Matlab program using Deal-Grove model and the values given in the table below to plot the oxide thickness (um) vs time (hr) log log graph for wet and dry oxidation of a <100> silicon wafer with no initial oxide for oxide thicknesses from 10 nm to 10 um for temperatures 800, 900, 1000, 1100 and 1200 °C. (Provide the Matlab code and Label the plots clearly for Temperature and Wet/Dry conditions. k=8.618x10-5 eV/K) b. Plot the oxide thickness (um) vs time (hr) log log graph for dry oxidation of a<100> silicon wafer with 25nm initial oxide for oxide thicknesses from 25 nm to 10 um for temperatures 800, 900, 1000, 1100 and 1200 °C. (Label the plots clearly for Temperature and Wet/Dry conditions. k=8.618x10-6 eV/K) and compare your results from part (a) Table 1 Rate constants describing (111) silicon oxidation kinetics at 1 atm total pressure. Ambient B B/A Dry O G = 7.72 x 10° u’ hr? E = 1.23 eV C = 6.23 x 100 u hr? E? = 2.0 eV Wet O, G = 2.14 x 10^uhr E = 0.71 eV C = 8.95 x 10' u hr E2 = 2.05 eV H,0 G = 3.86 x 10^u? hr E = 0.78 eV C2 = 1.63 x 108 u hr? E2 = 2.05 eV