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IV. (20 total pts) Consider the MOS capacitor shown below The substrate doping is NA=1x1016cm?. The oxide thickness tox=.1x104cm. The gate is a metal and the gate metal potential is ØM = 1V VGB=0 (the device is in equilibrium) VGB Gate SiO2 P-Si Doping: N T -tox 0 X do a) (2pts) Write the potential at x=0+ ( in the semiconductor)as a function of Op Xào. Na and Esi b) (2pts) Write the electric field at x=0 (in the oxide) as a function of xdo, Na and εox c) (2pts) Write the potential Ømas a function of Op , Xdo, Na, Esi, Cox, Eoxand tox d) (2pts) Use this expression to find a numerical value of xdo For these questions VGB 70 e) (2pts) Calculate the flatband voltage. f) (2pts) Write the applied voltage as a function of the flatland voltage Op , Na, Esi, and Cox (2pts) Calculate the threshold voltage VTH