1 For an ideal abrupt silicon p+-n junction with Np = 1016 cm-3, find the stored minority carriers per unit area in the
Posted: Sun May 15, 2022 4:54 pm
1 For an ideal abrupt silicon p+-n junction with Np = 1016 cm-3, find the stored minority carriers per unit area in the neutral n-region when a forward bias of 1 V is applied. The length of neutral region is 1 um and the diffusion length of the holes is 5 um. a Hint: The total minority carrier charge can be found by integrating the minority carriers over the region: rXn+1 um 2 = 9,5 *** lp = a A (-x-xn)/1p dx Mur – 1)e Prole Ixn