Answer Happy

Posted: **Sun May 15, 2022 4:52 pm**

: A One Sided P N Si Junction At 300 K Is Doped With Na 1019cm 3 The Cross Sectional Area Is 100 Um X 100um Design 1 (43.66 KiB) Viewed 42 times

= A one-sided p+-n Si junction at 300 K is doped with Na = 1019cm-3. The cross-sectional area is 100 um x 100um. Design the junction so that Cjunction = 0.85 pF at VR = 4.0 V. (Find the doping level for the n-type region).