Answer Happy

Possibly Useful Canstants Fl.10-19 coul Es = 11.728.85x10-1. Fcm Ear = 3.9x8.85x10-14 Fxcm mass of electron in Si 3.0x10"kg KT:{q=02599 leV=1.6023:10 Joules Intrinsic carrier concentration for Sin=lg10 am I. (10 total pts) Short Answers a) (2pts) Is Arsenic a N ar type dopant in Si b) (2pts) In an electric field pointing from right to left which way do electrons move? 5) pts) In an electric field pointing from right to left which way does the current flow? d) (2pts) An n-type Si semiconductor at room temperature has 2 uniform 1x10* Vom electric field and an electron mobility of 100 cm /V-s what is the drift velocity of the electrons ? e) (2pts) Is the drift velocity greater than or less than the thermal velocity? II (10 total pts) The PN junction of It has a structure given by the following the P doping 10 cm N doping 10''cm', W=2x10'em W =100x10 cm X=0032x10cm, x,.= 32x10 cm 1016 1018 2x10 cm 100x10 cm