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TV (20 total pts) Consider the MOS capacitor shown below The substrate doping is NA-1x10 Mem. The oxide thickness - 1x10 cm. The gate is a metal and the gate metal potential is y = 1V V-0 (the device is in equilibrium) VGB Gate Sio P-Si Doping: N. -tox 0 X do a) (2pts) What is the potential, for xx b) (2pts) What is the electric field at XX10 c) (2pts) Write the electric field at x0* (in the semiconductor) as a function of X., Na and Esi

d) (2pts) Write the potential at x-O-( in the semiconductor)as a function of e, x Na and Esi c) (2pts) Write the electric field at x=0 in the oxide) as a function of xo, Na and Box (2pts) Write the potential as a function of 8 X Nais. Con box and to E) (2pts) Use this expression to find a numerical value of xao For these questions Vaso h) (2pts) Calculate the flatband voltage 1) (2pts) Write the applied voltage as a function of the flatland voltage 8 Nits, and Cox 3) (2pts) Calculate the threshold voltage VH