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Posted: **Sun May 15, 2022 4:39 pm**

: Iv 20 Total Pts Consider The Mos Capacitor Shown Below The Substrate Doping Is Nx 1x106cm The Oxide Thickness To 1 1 (24.13 KiB) Viewed 52 times

: Iv 20 Total Pts Consider The Mos Capacitor Shown Below The Substrate Doping Is Nx 1x106cm The Oxide Thickness To 1 2 (41.93 KiB) Viewed 52 times

IV. (20 total pts) Consider the MOS capacitor shown below The substrate doping is Nx=1x106cm. The oxide thickness to = 1x104cm. The gate is a metal and the gate metal potential is ØM = 1V VGB=0 (the device is in equilibrium) VGB Gate SiO2 P-Si Doping: N - tox 0 X do х

c) (2pts) Write the electric field at x=0- (in the semiconductor) as a function of do. Na and ESI d) (2pts) Write the potential at x=0" (in the semiconductor)as a function of e, Xao. Na and Esi e) (2pts) Write the electric field at x=0- (in the oxide) as a function of Xao. Na and Eox f) (2pts) Write the potential Øyas a function of p, Xao. NA. Esi. Cos. Eoxandt 2 ox g) (2pts) Use this expression to find a numerical value of xao For these questions VG #0 h) (2pts) Calculate the flatband voltage. 1) (2pts) Write the applied voltage as a function of the flatland voltage op, Na. Esi, and Cox 1) (2pts) Calculate the threshold voltage VIH