Answer Happy

1. Consider a semiconductor where the Fermi energy is at Ec. And Eg=1 eV. What is the probability of having a full state at each of the energies below. If the answer is close to 1 or close to 0, don't just say "approximately one" or "approximately zero". Give a more exact answer than that! A. Ec B. Midgap C. Ey? 2. Consider a Haynes-Shockley experiment on a n-type silicon bar. If a pulse of electrons is injected at x=0, t=0, and of the maximum of the hole pulse reaches a probe at x= 100 microns at t=20 ns, determine electron mobility and diffusion coefficient using whatever method you like. Assume that a voltage of 1 V is maintained between the two ends of the 1 cm long bar. 3. For the hypothetical density of electrons in this p-doped semiconductor, calculate the electron diffusion current density at the left and right sides of this semiconductor. Express your answer in A/cm2. Assume a diffusion coefficient of 1 cm²/s. Hint: Use the relationship between current density and gradient of the charge density.