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Posted: **Sun May 15, 2022 2:34 pm**

: Prob 2 Silicon Pn Junction Diode Design A One Sided P N Si Junction At 300 K Is Doped With Na 1019cm 3 The Cross S 1 (24.81 KiB) Viewed 74 times

Prob. 2. Silicon pn junction diode design A one-sided p+-n Si junction at 300 K is doped with NA = 1019cm-3. The cross-sectional area is 100 um x 100um. Design the junction so that Cjunction = 0.85 pF at VR = 4.0 v. (Find the doping level for the n-type region).